Large melting-point hysteresis of Ge nanocrystals embedded in SiO2.
نویسندگان
چکیده
The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.
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عنوان ژورنال:
- Physical review letters
دوره 97 15 شماره
صفحات -
تاریخ انتشار 2006